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HiPerFASTTM IGBT
IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1
VCES IC25 VCE(sat) tfi
= = = =
600 V 76 A 1.7 V 200 ns
Preliminary data
(D1)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load TC = 25C
Maximum Ratings 600 600 20 30 76 39 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features International standard packages JEDEC TO-247 AD & TO-268 High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 39N60B 39N60BD1 39N60B 39N60BD1 39N60B 39N60B 39N60BD1 600 600 2.5 2.5 5.0 5.0 200 1 3 100 1.7 V V V A mA mA nA V
BVCES VGE(th) ICES
IC IC IC IC
= 250 A, VGE = 0 V = 750 A = 250 A, VCE = VGE = 500 A
PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Very fast switching speeds for high frequency applications
VCE = 0.8 * VCES TJ = 25C VGE = 0 V TJ = 125C
TJ = 125C
IGES VCE(sat)
VCE = 0 V, VGE = 20 V IC = I90, VGE = 15 V
(c) 2003 IXYS All rights reserved
DS97548A(02/03)
IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 19 28 2750 VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60B 39N60BD1 200 240 50 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 40 25 30 250 200 4.0 25 30 0.3 360 350 6.0 500 360 150 35 75 S
P
TO-247 AD Outline
gfs Cies Coes Cres QG QGE QGC td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF pF nC nC nC ns ns ns ns
Dim.
e
6.0 mJ ns ns mJ ns ns mJ 0.62 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
0.25
K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. TJ =150C TJ = 25C typ. max. 1.6 2.5 V V A ns ns 0.9 K/W
IF = IC90, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 %
IF = IC90, VGE = 0 V, -diF/dt = 100 A/s 6 VR = 100 V TJ = 100C 100 IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C 25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1
Fig. 1. Saturation Voltage Characteristics @ 25 Deg. C
40 35 30 IC - Amperes 25 20 15 10 5 0 0.4 0.8 1.2 1.6 VCE - Volts 2 2.4
5V V GE=15V 13V 11V 9V
Fig. 2. Extended Output Characteristics @ 25 Deg. C
160 140 120 IC - Amperes
V GE=15V 13V 11V
7V
100 80 60 40 20 0 0 1 2 3
9V
7V
5V
4
5
V CE - Volts
Fig. 3. Saturation Voltage Characteristics @ 125 Deg. C
100 80 IC - Amperes 60 40 20
5V V GE=15V 13V 11V 9V V CE(SAT) - Normalized
Fig. 4. Temperature Dependence of VCE(SAT)
1.45 1.3 1.15 1 0.85
IC=19.5A IC =39A IC=78A
7V
0
0.7
0
1
2
3
4
5
-50
-25
0
25
50
75
100 125 150
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. BVCES & V (GE)TH vs. Junction Temperature
1.2
BVCES & V(GE)TH - Normalized
Fig. 6. Admittance
100
1.1 1 0.9 0.8 0.7 -50 -25
V GE(TH)
BV CES
80 IC - Amperes 60 40 20 0
TJ= 125C 25C -40C
0
25
50
75
100 125 150
4
5
6
7
8
9
TJ - Degrees Centigrade
VGE - Volts
(c) 2003 IXYS All rights reserved
IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1
Fig. 7. Transconductance
50 40 GFS - Siemens 30 20 10 0 0 20 40 60 80 IC - Amperes 100 120
TJ = -40C 25C 125C
Fig. 8. Dependence of EOFF on IC
16 14 EOFF - millijoules 12 10 8 6 4 2 10 30 50 IC - Amperes 70 90
RG = 5 Ohms TJ = 125C V GE = 15V V CE = 480V RG = 56 Ohms
Fig. 9. Dependence of EOFF on RG
16 14 EOFF - milliJoules 12 EOFF - millijoules 10 8 6 4 2 0 0 10 20 30 RG - Ohm s 40 50 60 IC = 19.5A TJ = 125C V GE = 15V V CE = 480V IC = 39A IC = 78A 12 9 6 3 0 18 15
Fig. 10. Dependence of EOFF on Temperature
Solid lines - RG = 5 Ohms Dashed lines - RG = 56 Ohms V GE = 15V V CE = 480V IC = 78A
IC = 39A IC = 19.5A 0 25 50 75 100 125 150
TJ - Degrees Centigrades
Fig. 11. Gate Charge
15 12 VCE - Volts 9 6 3 0 0 20 40 60 80 QG - nanocoulombs 100 120
V CE=300V IC=20A
Fig. 12. Transient Thermal Response
1
R(TH)JC (C/W)
IG=10mA
0.1
0.01 1 10 100 Pulse Width - milliseconds 1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1
60 A 50 IF 40 1000 T = 100C VJ nC VR = 300V 800 Qr 30 A 25 IRM 20 15 400 20 10
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
IF= 60A IF= 30A IF= 15A
TVJ=150C
30
600
TVJ=100C
TVJ=25C
10 0 0 1 2 VF 3V 200 5 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt
0 100
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 14 Peak reverse current IRM versus -diF/dt
20 TVJ= 100C IF = 30A V VFR 15 1.00
2.0
TVJ= 100C VR = 300V
VFR
s tfr 0.75
1.5 Kf 1.0
trr 80
tfr
IRM
70
IF= 60A IF= 30A IF= 15A
10
0.50
0.5
Qr
5
0.25
0.0 0 40 80 120 C 160 TVJ
60 0 200 400 600 -diF/dt 800 A/s 1000
0 0 200 400
0.00 600 A/s 1000 800 diF/dt
Fig. 15 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
0.1 ZthJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1 t
s
1
Fig. 18 Transient thermal resistance junction to case
(c) 2003 IXYS All rights reserved

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